DocumentCode
1591673
Title
Design and characterization of Si integrated inductors
Author
Arcioni, Paolo ; Castello, Rinaldo ; Astis, Giuseppe De ; Sacchi, Enrico ; Svelto, Francesco
Author_Institution
Dipt. di Elettronica, Pavia Univ., Italy
Volume
2
fYear
1998
Firstpage
1395
Abstract
This work describes a method to derive from measurements an accurate lumped element model of spiral integrated inductors on silicon substrate. The analysis method is based on a wideband two-port measurement of the S-parameters of the device under test and enables an accurate evaluation of the parasitic effects that limit the performance of these integrated devices
Keywords
BiCMOS integrated circuits; CMOS integrated circuits; S-parameters; electric variables measurement; elemental semiconductors; equivalent circuits; inductors; integrated circuit design; lumped parameter networks; silicon; substrates; two-port networks; BiCMOS; CMOS; S-parameters; Si; Si integrated inductors; Si substrate; lumped element model; parasitic effects; performance; spiral integrated inductors; wideband two-port measurement; CMOS process; CMOS technology; Conducting materials; Cutoff frequency; Inductors; Scattering parameters; Silicon; Spirals; Testing; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Instrumentation and Measurement Technology Conference, 1998. IMTC/98. Conference Proceedings. IEEE
Conference_Location
St. Paul, MN
ISSN
1091-5281
Print_ISBN
0-7803-4797-8
Type
conf
DOI
10.1109/IMTC.1998.676983
Filename
676983
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