Title :
Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide
Author :
Mardiana, B. ; Hazura, H. ; Hanim, A.R. ; Menon, P.S. ; Abdullah, Huda
Author_Institution :
Inst. of Microengineering & Nanoelectron. (IMEN), Univ. Kebangsaan Malaysia (UKM), Bangi, Malaysia
Abstract :
This paper highlights the study of the carrier injection mode and the carrier depletion mode of the phase modulator. The phase modulator device has been integrated in the silicon rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. Summarily, the phase modulator device has less sensitivity to the effective refractive index changes when operating in reverse biased or depletion mode compared to the forward biased or injection mode.
Keywords :
elemental semiconductors; p-i-n diodes; phase modulation; rib waveguides; silicon; 2D semiconductor package SILVACO software; Si; carrier depletion mode; carrier dispersion effect; carrier injection mode; depletion mode; electrical device performance; forward biased mode; p-i-n diode structure; phase modulation; refractive index; reverse biased mode; rib waveguide; Dispersion; High speed optical techniques; Optical refraction; Optical variables control; Optical waveguides; P-i-n diodes; Phase modulation; Photonic integrated circuits; Refractive index; Silicon;
Conference_Titel :
Semiconductor Electronics (ICSE), 2010 IEEE International Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-6608-5
DOI :
10.1109/SMELEC.2010.5549510
