Title :
SIMOX and VLSI high speed and rad hard applications: discussion of floating body effects and circuits optimization
Author_Institution :
CEA-IRDI-D LETI, CENG, Grenoble, France
Abstract :
Some results obtained in a CMOS prototype line environment are reported to show the compatibility of SIMOX (separation by implantation of oxygen) technology with industrial applications. The main parameters of devices and circuits optimization are analyzed in terms of VLSI applications. New floating-body effects and solutions to improve the SOI performances are discussed. High-speed and radiation-hard technologies are examined
Keywords :
CMOS integrated circuits; VLSI; integrated circuit technology; ion implantation; radiation hardening (electronics); semiconductor-insulator boundaries; CMOS; SIMOX CMOS technology; SOI performances; Si-SiO2-Si; VLSI high speed; circuits optimization; compatibility of SIMOX; floating body effects; industrial applications; prototype line environment; rad hard applications; radiation-hard technologies; separation by implantation of oxygen; Circuits; Very large scale integration;
Conference_Titel :
SOS/SOI Technology Workshop, 1988. Proceedings., 1988 IEEE
Conference_Location :
St. Simons Island, GA
DOI :
10.1109/SOI.1988.95427
