Title :
Quantum dot lasers on silicon
Author :
Liu, Alan Y. ; Chong Zhang ; Gossard, Arthur C. ; Bowers, John E.
Author_Institution :
Mater. Dept., UCSB, Santa Barbara, CA, USA
Abstract :
We describe recent developments on 1.3 μm InAs/GaAs quantum dot lasers epitaxially grown on silicon by molecular beam epitaxy. Record high output powers, lasing temperatures, and operating lifetimes among GaAs based lasers epitaxially grown on silicon have been achieved.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical fabrication; quantum dot lasers; silicon; InAs-GaAs; Si; lasing temperatures; molecular beam epitaxy; operating lifetimes; output powers; quantum dot lasers; silicon; wavelength 1.3 mum; Gallium arsenide; Power generation; Quantum dot lasers; Silicon; Threshold current; Waveguide lasers;
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
DOI :
10.1109/Group4.2014.6961926
