• DocumentCode
    1592682
  • Title

    Green Transistor - A VDD Scaling Path for Future Low Power ICs

  • Author

    Hu, Chenming ; Chou, Daniel ; Patel, Pratik ; Bowonder, Anupama

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA
  • fYear
    2008
  • Firstpage
    14
  • Lastpage
    15
  • Abstract
    IC power consumption is not only a package thermal issue but also a significant and fast growing part of the world electricity consumption. A new low voltage transistor could contribute greatly to the need for a new Vdd scaling scenario. Green transistor (gFET) is based on tunneling and provides Ion and Ioff far superior to MOSFET at 0.2 V if suitable low-Eg material is introduced into IC manufacturing.
  • Keywords
    field effect transistors; integrated circuit packaging; power consumption; tunnelling; IC manufacturing; IC power consumption; VDD scaling path; electricity consumption; gFET; green transistor; low power integrated circuit; low voltage transistor; thermal package; tunneling; voltage 0.2 V; Effective mass; Energy consumption; Inverters; MOSFET circuits; Packaging; Photonic band gap; Semiconductor materials; Thermal management; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-1614-1
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2008.4530776
  • Filename
    4530776
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1592682