Title :
Carrier lifetimes in uniaxially strained Ge micro bridges
Author :
Geiger, Richard ; Suess, M.J. ; Bonzon, C. ; Frigerio, Jacopo ; Chrastina, D. ; Isella, Giovanni ; Spolenak, R. ; Faist, J. ; Sigg, Hans
Author_Institution :
Lab. for Micro- & Nanotechnol, Paul Scherrer Inst., Villigen, Switzerland
Abstract :
The performance of strained Ge bridges is compared with unprocessed layers in terms of their non-radiative recombination time. Despite strain and additionally introduced free surfaces, the lifetime for the strained microstructures does not decrease.
Keywords :
CMOS integrated circuits; carrier lifetime; elemental semiconductors; germanium; integrated optics; micro-optics; optical interconnections; CMOS chips; Ge; carrier lifetimes; nonradiative recombination time; optical interconnects; strained microstructures; uniaxially strained Ge microbridges; Bridge circuits; Bridges; Optical waveguides; Radiative recombination; Silicon; Strain;
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
DOI :
10.1109/Group4.2014.6961937
