Carrier injection refractive index changes in low-temperature grown silicon waveguide

Author

Takei, Ryohei ; Maegami, Yuriko ; Manako, Shoko ; Omoda, E. ; Sakakibara, Y. ; Mori, Marco ; Fujikata, J. ; Kamei, Toshihiro

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2014

fDate

27-29 Aug. 2014

Firstpage

239

Lastpage

240

Abstract

We demonstrated a carrier-injection refractive index change (Δn) in low-temperature (<;350°C) grown pin μc-Si:H/a-Si:H/μc-Si:H heterostructure waveguide fabricated with a CMOS backend compatible process. A Δn of -4.9×10^-4 was observed at an applied voltage of 20V.

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; integrated optoelectronics; optical fabrication; optical waveguides; refractive index; semiconductor heterojunctions; silicon; CMOS backend compatible process; Si:H-Si:H-Si:H; carrier-injection refractive index change; low-temperature grown pin heterostructure waveguide; low-temperature grown silicon waveguide; voltage 20 V; High-speed optical techniques; Optical device fabrication; Optical refraction; Optical variables control; Optical waveguides; Silicon; Ultrafast optics; carrier-plasma effect; hydrogenated amorphous silicon; microcrystalline silicon; on-chip optical interconnect; silicon photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2014 IEEE 11th International Conference on

Conference_Location

Paris

Print_ISBN

978-1-4799-2282-6

Type

conf

DOI

10.1109/Group4.2014.6961943

Filename

6961943