Title :
Pockels effect study in strained silicon Mach-Zenhder interferometer
Author :
Damas, Pedro ; Le Roux, X. ; Le Bourdais, David ; Cassan, Eric ; Marris-Morini, D. ; Izard, Nicolas ; Maillard, Franccois ; Maroutian, Thomas ; Lecoeur, Philippe ; Vivien, L.
Author_Institution :
Inst. d´E lectronique Fondamentale, Univ. Paris Sud, Orsay, France
Abstract :
We report the study of the wavelength dependence in the NIR range (1.3 μm-1.63 μm), of the Pockels effect in strained silicon. The measured second order nonlinear optical susceptibilities varied from Xxxy(2) = 74 ± 25 pm/V to Xxxy(2) = 221 ±34 pm/V, at λ = 1300 nm and λ = 1630 nm respectively.
Keywords :
Mach-Zehnder interferometers; Pockels effect; elemental semiconductors; nonlinear optical susceptibility; silicon; NIR range; Pockels effect; Si; second order nonlinear optical susceptibility; strained silicon Mach-Zenhder Interferometer; wavelength 1.3 mum to 1.63 mum; wavelength dependence; Electrooptical waveguides; Modulation; Silicon photonics; Strain; Wavelength measurement;
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
DOI :
10.1109/Group4.2014.6961945
