Title :
Film uniformly in bond and etch-back silicon on insulator (BESOI)
Author :
Hunt, Charles E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Davis, CA, USA
Abstract :
BESOI is made epitaxially growing a high-resistivity layer on a low-resistivity substrate, oxidizing the epilayer, and then thermally bonding a second oxidized wafer (the handle) onto the oxidized epilayer. The SOI film is then formed by etching the original substrate up to the epilayer, leaving the handle as the new substrate. The major incentive for using this technology is the thermal Si/SiO2 interface between the SOI layer and the insulator. The author discusses briefly film thickness problems and the techniques whereby they can be minimized
Keywords :
field effect integrated circuits; semiconductor epitaxial layers; semiconductor technology; semiconductor-insulator boundaries; BESOI; SOI film; SOI layer; Si-SiO2; bond and etch-back silicon on insulator; film thickness problems; film uniformity; high-resistivity layer; low-resistivity substrate; oxidized epilayer; thermal Si/SiO2 interface; wafer bonding; Bonding; Etching; Semiconductor films; Silicon on insulator technology;
Conference_Titel :
SOS/SOI Technology Workshop, 1988. Proceedings., 1988 IEEE
Conference_Location :
St. Simons Island, GA
DOI :
10.1109/SOI.1988.95429
