Title :
Low-voltage Ge avalanche photodetector for highly sensitive 10Gb/s Si photonics receivers
Author :
Chen, Huan Ting ; Verheyen, P. ; Rakowski, M. ; De Heyn, P. ; Lepage, G. ; De Coster, J. ; Absil, P. ; Roelkens, Gunther ; Van Campenhout, J.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
We demonstrate low-voltage germanium waveguide avalanche photodetectors (APD) with gain-bandwidth product of 88GHz. A 7.1dB sensitivity improvement is demonstrated for an APD wire-bonded to a 10Gb/s CMOS transimpedance amplifier, at -6.2V APD bias.
Keywords :
elemental semiconductors; germanium; integrated optoelectronics; lead bonding; operational amplifiers; optical receivers; optical waveguides; photodetectors; silicon; APD bias; APD wire-bonding; CMOS transimpedance amplifier; Ge-Si; bandwidth 88 GHz; bit rate 10 Gbit/s; gain-bandwidth product; highly sensitive photonics receivers; low-voltage germanium waveguide avalanche photodetectors; voltage -6.2 V; Bandwidth; Optical receivers; Optical sensors; Optical waveguides; Sensitivity; Silicon; Avalanche photodetector; Optical interconnects; Silicon photonics;
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
DOI :
10.1109/Group4.2014.6961949
