DocumentCode
159298
Title
Sharp and intense emission of Si-vacancy luminescent center in diamond film grown on Si (100) substrate
Author
Isshiki, Hideo ; Komiya, Kazuki ; Kojima, Keisuke ; Souma, Yuji ; Shigeeda, Tetsuya
Author_Institution
Dept. of Eng. Sci., Univ. of Electro-Commun., Chofu, Japan
fYear
2014
fDate
27-29 Aug. 2014
Firstpage
112
Lastpage
113
Abstract
Sharp and intense emission from the Si-V luminescent center in diamond grown on Si is observed. Possibility of the Si-V luminescence center as a light source for integrated quantum photonics on Si chip is suggested.
Keywords
diamond; integrated optics; light sources; optical materials; photoluminescence; silicon; C; Si; Si (100) substrate; Si-V luminescence center; Si-vacancy luminescent center; diamond film grown; integrated quantum photonics on Si chip; intense emission; light source; sharp emission; Diamonds; Films; Microwave imaging; Microwave photonics; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location
Paris
Print_ISBN
978-1-4799-2282-6
Type
conf
DOI
10.1109/Group4.2014.6961952
Filename
6961952
Link To Document