A Carbon Co-implantation Technique for Formation of Steep Halo for nFET Short Channel Effect improvement and Performance Boost

Author

Tan, Chung Foong ; Lee, Jae Gon ; Teo, Lee Wee ; Yin, Chunshan ; Lin, Gang ; Quek, Elgin ; Chu, Sanford

Author_Institution

Device Design, Chartered Semicond. Manuf., Singapore

fYear

2008

Firstpage

32

Lastpage

33

Abstract

For the first time, short channel effects (SCE) of the nFET has been improved while achieving a performance boost of 7% (additive to the process induced stress technique). This was achieved by realizing a steep halo profile via strategically positioned carbon regions at the source and drain extension (SDE) regions. The tailored halo profiles also decreased the overlap (C_ov) and junction capacitance (Cj). In effect, a resultant 6.5% decrease in ring oscillator (RO) delay was obtained. The carbon co- implanted device has indicated no compromise in the reliability and noise performance.

Keywords

field effect transistors; ion implantation; oscillators; carbon co-implantation technique; junction capacitance; nFET; ring oscillator delay; short channel effect; source-and-drain extension region; steep halo profile; Boron; MOSFET circuits; Manufacturing industries; Manufacturing processes; Pulp manufacturing; Ring oscillators; Scattering; Semiconductor device manufacture; Stress; Surface-mount technology;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-1614-1

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2008.4530785

Filename

4530785