Effect of End-of-Range Defects on Device Leakage in Direct Silicon Bonded (DSB) Technology

Author

Yin, Haizhou ; Hamaguchi, M. ; Saenger, K.L. ; Sung, C.Y. ; Hasumi, R. ; Ohuchi, K. ; Zhang, R. ; Cai, J. ; Ott, J.A. ; Chen, X. ; Luo, Z.J. ; Rovedo, N. ; Fogel, K. ; Pfeiffer, G. ; Kleinhenz, R. ; Sadana, D.K. ; Takayanagi, M. ; Ishimaru, K. ; Ning, T.H

Author_Institution

Syst. & Technol. Group, IBM Semicond. R&D Center, Hopewell Junction, NY

fYear

2008

Firstpage

34

Lastpage

35

Abstract

End-of-range (EOR) defects generated during the crystal orientation conversion process in DSB technology can give rise to various types of junction leakage depending on their locations relative to device structures. A wide range of EOR defect depths are investigated. Shallow-implant-induced EOR defects (~100 nm) are found to minimize junction leakages due to EOR defects being outside of junction depletion regions. These implant conditions produce no adverse impact on source/drain channel leakage, suggesting that the crystal conversion process is optimized by shallow implants.

Keywords

crystal orientation; field effect transistors; semiconductor junctions; NFET; NFETs; PFETs; crystal orientation conversion; direct silicon bonded technology; end-of-range defects; junction depletion regions; junction leakage; shallow implants; Bonding; Crystallization; Degradation; Electronic components; Epitaxial growth; Implants; Research and development; Silicon; Solids; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-1614-1

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2008.4530786

Filename

4530786