High Charge Storage Characteristics of CeO2 Nanocrystals for Novolatile Memory Applications

Author

Yang, Shao-Ming ; Huang, Jiun-Jia ; Chien, Chao-Hsin ; Taeng, Pei-Jer ; Lee, Lurng-Shehng ; Tsai, Ming-Jinn ; Lei, Tan-Fu

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu

fYear

2008

Firstpage

48

Lastpage

49

Abstract

This paper presents the formation of CeO₂ nanocrystals on SiO₂ tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO₂) nanocrystals were studied to demonstrate its advantages as a nonvolatile memory device.

Keywords

annealing; cerium compounds; nanostructured materials; random-access storage; silicon compounds; tunnelling; CeO₂; SiO₂; annealing effect; data retention; high charge storage characteristics; nanocrystals; nonvolatile memory applications; nonvolatile memory device; program/erase behaviors; silicon-oxide-nitride-oxide-silicon type memories; tunneling layer; Annealing; Cerium; Electron traps; High K dielectric materials; High-K gate dielectrics; Industrial electronics; Nanocrystals; Nonvolatile memory; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-1614-1

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2008.4530792

Filename

4530792