DocumentCode
1593353
Title
High Endurance Multi-gate TiN Nanocrystal Memory Devices with High-k Blocking Dielectric and High Work Function Gate Electrode
Author
Lu, C.P. ; Luo, C.K. ; Tsui, B.Y. ; Lin, C.H. ; Tzeng, P.J. ; Wang, C.C. ; Lee, H.Y. ; Wu, D.Y. ; Tsai, M.J.
Author_Institution
Dept. of Electron. Eng., Inst. of Electron., Hsinchu
fYear
2008
Firstpage
62
Lastpage
63
Abstract
In this work, n-channel Multi-gate FET TiN nanocrystal memory using p+ poly-Si gate and Al2O3 high-k blocking dielectric is demonstrated with good transistor characteristics and moderate high memory window for the first time. High endurance of only 3% window narrowing after 104 P/E cycles is demonstrated. The phenomenon and mechanism of erasing-first induced retention degradation are also reported.
Keywords
field effect transistors; semiconductor storage; Al2O3; TiN; high work function gate electrode; high-k blocking dielectric; multigate nanocrystal memory device; n-channel multigate FET; Degradation; Dielectric devices; Electrodes; FETs; High K dielectric materials; High-K gate dielectrics; Nanocrystals; SONOS devices; Space vector pulse width modulation; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
978-1-4244-1614-1
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2008.4530799
Filename
4530799
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