Title :
Post CMOS Nanoelectronics Research for the Next Generation Logic Switches
Author_Institution :
Res. Div., T.J. Watson Res. Center, IBM, Yorktown Heights, NY
Abstract :
Electron charge has been the computational state variable for decades. The industry has benefited by scaling charge-based devices to provide better performance per unit cost. However, a new switch is urgently needed because scaling may fail to keep providing benefits at the historical rate. We discuss charge switch thermal dissipation limits, the nanoelectronics research initiative (NRI) effort, and emerging technologies in this paper.
Keywords :
CMOS integrated circuits; logic circuits; nanoelectronics; switches; CMOS; charge switch thermal dissipation limits; logic switches; nanoelectronics; nanoelectronics research initiative; CMOS logic circuits; CMOS technology; Electron tubes; Logic devices; Nanoelectronics; Switches; Temperature; Thermal management; Thermodynamics; Throughput;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2008.4530802
