Title :
New functionality and ultra low power: key opportunities for post-CMOS era
Author :
Ionescu, Adrian M.
Author_Institution :
Lab. of Micro/Nanoelectronic Devices, Ecole Polytech. Fed. de Lausanne EPFL/STI/LEG2, Lausanne
Abstract :
This paper addresses the challenges and opportunities offered by post-CMOS devices in terms of new functionality and ultra low power. It focuses on the illustration of: (i) the quest for the new electronic abrupt switches (tunnel-FET and IMOS/PIMOS) and (ii) the quest for new functionality that can be offered by some non-pure electronic functions (as nano-mechanical integrated functions offered by suspended gate - FET). It is shown that beneficial interactions between the beyond CMOS and More-than-Moore domains should be considered in the post-CMOS era. A system design perspective with particular attention to the true benefits at circuit and system levels and the need for accompanying the technology and device effort by adapted design and/or new system architectures, is discussed and illustrated with some examples concerning power management, digital and analog applications.
Keywords :
field effect transistor switches; low-power electronics; tunnel transistors; PIMOS; analog applications; digital applications; electronic abrupt switches; nano-mechanical integrated functions; post-CMOS devices; power management; suspended gate-FET; tunnel-FET; CMOS technology; Energy management; FETs; High K dielectric materials; High-K gate dielectrics; Impact ionization; Nanoscale devices; Silicon; Switches; Tunneling;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2008.4530804