• DocumentCode
    159348
  • Title

    Reabsorption effects on direct band gap emission from germanium light emitting diodes

  • Author

    Yen-Yu Chen ; Chia-Chun Yen ; Yi-Hsin Nien ; Wen-Wei Hsu ; Qing-Qi Chen ; Liu, C.W.

  • fYear
    2014
  • fDate
    27-29 Aug. 2014
  • Firstpage
    179
  • Lastpage
    180
  • Abstract
    The lateral current flow in the lateral light emitting diode can confine carrier distribution near the top surface, and thus relatively stronger direct band gap emission is observed.
  • Keywords
    elemental semiconductors; germanium; integrated optoelectronics; light emitting diodes; Ge; carrier distribution confinement; direct band gap emission; germanium light emitting diodes; lateral current flow; reabsorption effects; Current density; Electrodes; Laser excitation; Light emitting diodes; Metals; Photonic band gap; Photonics; light emitting diodes; reabsorption effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4799-2282-6
  • Type

    conf

  • DOI
    10.1109/Group4.2014.6961978
  • Filename
    6961978
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=159348