• DocumentCode
    1593501
  • Title

    A 45nm NOR Flash Technology with Self-Aligned Contacts and 0.024μm2 Cell Size for Multi-level Applications

  • Author

    Fastow, R. ; Banerjee, R. ; Bjeletich, P. ; Brand, A. ; Chao, H. ; Gorman, J. ; Guo, X. ; Heng, J.B. ; Koenigsfeld, N. ; Ma, S. ; Masad, A. ; Soss, S. ; Woo, B.J.

  • Author_Institution
    Intel Corp., Santa Clara, CA
  • fYear
    2008
  • Firstpage
    81
  • Lastpage
    82
  • Abstract
    A 45nm NOR flash technology featuring a self aligned contact ETOX architecture is demonstrated on a 1 Gbit MLC product having a die area of 30.05mm2. The cell size of 0.024μm2 is the smallest NOR cell reported to date and is manufactured entirely with dry lithography tools. With an aggressively scaled drain space of 100nm and gate length of 110nm, the cell shows robust short channel behavior, and excellent cycling behavior.
  • Keywords
    NOR circuits; flash memories; lithography; NOR flash memory; dry lithography tools; memory size 1 GByte; self aligned contact ETOX architecture; short channel behavior; size 100 nm to 110 nm; size 45 nm; Educational institutions; Flash memory; Implants; Lithography; Manufacturing; Plugs; Rails; Robustness; Space technology; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-1614-1
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2008.4530808
  • Filename
    4530808
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1593501