Title :
Computer simulation of anisotropic crystal etching
Author_Institution :
California Univ., Berkeley, CA, USA
Abstract :
The geometrical shapes resulting from anisotropic etching of crystalline substances are investigated. A simulator has been built that constructs boundary representations of the polyhedral models of such shapes starting from an etch rate polar diagram. Special attention is given to situations in which new faces emerge that were not previously present.<>
Keywords :
electronic engineering computing; etching; integrated circuit technology; physics computing; semiconductor technology; anisotropic crystal etching; boundary representations; computer simulation; etch rate polar diagram; geometrical shapes; micromachining; polyhedral models; Anisotropic magnetoresistance; Computational geometry; Computational modeling; Computer science; Computer simulation; Crystallization; Etching; Gratings; Shape; Silicon;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.149005
