• DocumentCode
    159377
  • Title

    Simulation of carrier-depletion strained SiGe optical modulators with vertical p-n junction

  • Author

    Younghyun Kim ; Takenaka, Mitsuru ; Takagi, Shinichi

  • Author_Institution
    Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2014
  • fDate
    27-29 Aug. 2014
  • Firstpage
    153
  • Lastpage
    154
  • Abstract
    Carrier-depletion strained SiGe optical modulators with a vertical p-n junction is numerically investigated. Due to the enhancement of the plasma dispersion effect in SiGe, SiGe0.3 modulator is predicted to exhibit 0.43 V-cm at -3 V.
  • Keywords
    Ge-Si alloys; numerical analysis; optical modulation; p-n junctions; semiconductor materials; SiGe; carrier-depletion strained optical modulators; plasma dispersion effect; vertical p-n junction; voltage -3 V; Optical device fabrication; Optical modulation; Optical waveguides; P-n junctions; Silicon; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4799-2282-6
  • Type

    conf

  • DOI
    10.1109/Group4.2014.6961993
  • Filename
    6961993
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=159377