DocumentCode
1593855
Title
A new MOSFET & IGBT gate drive insulated by a piezoelectric transformer
Author
Vasic, Dejan ; Costa, François ; Sarraute, Emmanuel
Author_Institution
Ecole Normale Superieure de Cachan, France
Volume
3
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
1479
Abstract
In this paper, a new gate drive for MOSFET´S and IGBT´S is presented based on the use of a piezoelectric transformer. The characterisation of the transformer and the analysis of the energy transferred to the grid of the transistor are achieved in order to determine the optimal physical structure of the transformer. Satisfactory results have been obtained in driving a 6A/100V/10kHz chopper
Keywords
bipolar transistor switches; choppers (circuits); driver circuits; field effect transistor switches; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power semiconductor switches; transformers; 10 kHz; 100 V; 6 A; IGBT gate drive; MOSFET gate drive; chopper; energy transfer analysis; piezoelectric transformer; transformer characterisation; transistor grid; Demodulation; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power transformer insulation; Pulse modulation; Pulse transformers; Resonant frequency; Switches; Vibrations;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual
Conference_Location
Vancouver, BC
ISSN
0275-9306
Print_ISBN
0-7803-7067-8
Type
conf
DOI
10.1109/PESC.2001.954328
Filename
954328
Link To Document