DocumentCode :
159393
Title :
Low-αVπL. 25-Gb/s silicon modulator based on forward-biased pin diodes
Author :
Baba, Toshihiko ; Akiyama, Soramichi ; Imai, Masayoshi ; Horikawa, Tsuyoshi ; Usuki, Tatsuya
Author_Institution :
Photonics Electron. Technol. Res. Assoc. (PETRA), Tsukuba, Japan
fYear :
2014
fDate :
27-29 Aug. 2014
Firstpage :
5
Lastpage :
6
Abstract :
We developed a 25-Gb/s silicon modulator with 9.83-dB·V αVπL, which is smallest of those operated at 25 Gb/s and higher. We used forward-biased diode operations, which enables small VπL with moderately doped low-loss waveguides.
Keywords :
optical losses; optical modulation; optical waveguides; p-i-n photodiodes; silicon; bit rate 25 Gbit/s; forward-biased diode operations; forward-biased pin diodes; low-αVπL silicon modulator; moderately doped low-loss waveguides; small VπL; High-speed optical techniques; Optical modulation; Optical waveguides; Phase modulation; Phase shifters; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
Type :
conf
DOI :
10.1109/Group4.2014.6962000
Filename :
6962000
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=159393
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