Integration Strategy of Embedded SiGe S/D CMOS from Viewpoint of Performance and Cost for 45nm-Node and Beyond

Direct comparison between competitive process flows showed that the eSiGe-S/D-last flow is the most promising CMOS integration process for manufacturing 45-nm technology node and beyond because it has good extensibility with various performance boosters, has fewer process steps and suppresses electrical fluctuations. The eSiGe-S/D-last (after offset spacer + I.I.) flow creates a sufficient process window that comprehensively optimizes both channel strain, induced by eSiGe-S/D (proximity, elevated height, and uniformity), and carrier profiles (offset spacer and thermal budget including millisecond annealing). An optimized eSiGe-S/D with a low thermal budget and amorphous Si gate decreases electrical fluctuations resulting in continuous scaling and a lower manufacturing cost.