Title :
KOH etch rates of high-index planes from mechanically prepared silicon crystals
Author :
Herr, E. ; Baltes, H.
Author_Institution :
ETH Zurich, Switzerland
Abstract :
Etch rates of the high-index crystal planes (n11) and (1nn) with n=2, 3, 4 are determined by vertical etching of beveled silicon samples. KOH concentrations between 2 mole/1 and 10 mole/1 (10wt.%-40wt.%) and temperatures between 70 degrees C and 95 degrees C are used. The results differ from previous ones obtained by underetching special mask patterns.<>
Keywords :
elemental semiconductors; etching; semiconductor technology; silicon; 70 to 95 C; KOH etch rates; anisotropic etching; elemental semiconductor; high-index planes; mechanically prepared Si crystals; micromachining; vertical etching; Crystals; Etching; Laboratories; Measurement standards; Rough surfaces; Silicon; Surface roughness; Surface treatment; Temperature; Testing;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.149006
