Title :
Epitaxy and photoluminescence studies of high quality GeSn heterostructures with Sn concentrations up to 13 at.%
Author :
Wirths, Stephan ; Geiger, Richard ; Ikonic, Zoran ; Tiedemann, Andreas T. ; Mussler, Gregor ; Hartmann, J.-M. ; Mantl, Siegfried ; Sigg, Hans ; Grutzmacher, D. ; Buca, Dan
Author_Institution :
Peter Grunberg Inst. (PGI 9), Forschungszentrum Juelich, Grunberg, Germany
Abstract :
We present photoluminescence measurements on highly compressively strained and partially relaxed GeSn alloys with Sn contents up to 13 at.%. Calculations predict a net gain of 572 cm-1 for partially relaxed and moderately doped Ge0.88Sn0.12.
Keywords :
germanium alloys; photoluminescence; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor materials; tin alloys; GeSn; compressively strained alloys; epitaxial layer; high quality heterostructures; moderately doped alloys; partially relaxed alloys; photoluminescence measurements; Epitaxial growth; Lattices; Photoluminescence; Strain; Temperature measurement; Tin; Chemical Vapor Deposition; Germanium-Tin; Group IV alloys; Laser materials; Photoluminescence; Si photonics; low temperature epitaxy;
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
DOI :
10.1109/Group4.2014.6962005
