Title :
Infrared spectral response of a GeSn p-i-n photodiode on Si
Author :
Conley, Benjamin R. ; Yiyin Zhou ; Mosleh, Aboozar ; Ghetmiri, Seyed Amir ; Wei Du ; Soref, Richard A. ; Sun, Guofa ; Margetis, Joe ; Tolle, John ; Naseem, Hameed A. ; Shui-Qing Yu
Author_Institution :
Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA
Abstract :
The Ge/Ge0.94Sn0.06/Ge double heterostructure, grown on a Si substrate was fabricated into a p-i-n photodiode. The dark I-V characteristics and 1.4-2.2 μm spectral response were measured for comparison with other on Si infrared detectors.
Keywords :
germanium; germanium compounds; infrared detectors; integrated optics; optical fabrication; optical films; optical materials; p-i-n photodiodes; silicon; Ge-Ge0.94Sn0.06-Ge; Ge/Ge0.94Sn0.06/Ge double heterostructure; GeSn p-i-n photodiode on Si; Si infrared detectors; Si substrate; dark I-V characteristics; infrared spectral response; optical fabrication; wavelength 1.4 mum to 2.2 mum; Current measurement; Detectors; Doping; PIN photodiodes; Silicon; Tin;
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
DOI :
10.1109/Group4.2014.6962006
