High speed vertical GeSn photodiodes on Si

Author

Gollhofer, Martin ; Oehme, Michael ; Kostecki, Konrad ; Kaiheng Ye ; Bechler, Stefan ; Ulbricht, Kai ; Schmid, Maurizio ; Kaschel, Mathias ; Korner, Roman ; Wogong Zhang ; Kasper, Erich ; Schulze, J.

Author_Institution

Inst. for Semicond. Eng., Univ. of Stuttgart, Stuttgart, Germany

fYear

2014

fDate

27-29 Aug. 2014

Firstpage

19

Lastpage

20

Abstract

Vertical GeSn pin photodiodes with Sn content of 0 %, 2 % and 4.2 %, resp., grown with molecular beam epitaxy on thin Ge virtual substrates on Si are investigated by using the electrical and optoelectrical methods: direct current, light responsivity and optical high frequency (40 GHz). The vertical photodiodes were fabricated with a double mesa process. The mesa radii are between 5 μm and 80 μm. For a laser wavelength of 1550 nm an increase of the optical responsivities (84 mA/W-218 mA/W) for the vertical photodiodes with thin (300 nm) absorbers as function of the Sn content is found. The optical high frequency bandwidth of all photodiodes with 5 μm radius is above 40 GHz at enough reverse voltage [1].

Keywords

germanium compounds; high-speed optical techniques; micro-optics; microfabrication; molecular beam epitaxial growth; nanophotonics; optical fabrication; photodiodes; semiconductor growth; silicon; GeSn-Si; direct current; double mesa process; frequency 40 GHz; high speed vertical germanium selenide photodiode-on-silicon; laser wavelength; light responsivity; molecular beam epitaxy; optical fabrication; optical high frequency bandwidth; optoelectrical methods; radius 5 mum to 80 mum; size 300 nm; thin germanium virtual substrates; wavelength 1550 nm; Bandwidth; Molecular beam epitaxial growth; Optical device fabrication; PIN photodiodes; Silicon; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2014 IEEE 11th International Conference on

Conference_Location

Paris

Print_ISBN

978-1-4799-2282-6

Type

conf

DOI

10.1109/Group4.2014.6962007

Filename

6962007