Title :
Direct transition Ge0.94Sn0.06 PIN-diode double heterostructure light emitter at high injection
Author :
Wei Du ; Ghetmiri, Seyed Amir ; Mosleh, Aboozar ; Conley, Benjamin R. ; Liang Huang ; Nazzal, Amjad ; Soref, Richard A. ; Sun, Guofa ; Tolle, John ; Margetis, Joe ; Naseem, Hameed A. ; Shui-Qing Yu
Author_Institution :
Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA
Abstract :
The Ge/Ge0.94Sn0.06/Ge double heterostructure was grown on a Si substrate via chemical vapor deposition (CVD). The temperature and pump power-dependent photoluminescence (PL) were investigated and the enhanced direct transition at intense pump power was observed.
Keywords :
chemical vapour deposition; germanium; germanium compounds; light emitting diodes; optical fabrication; optical films; optical pumping; p-i-n photodiodes; photoluminescence; silicon; CVD; Ge-Ge0.94Sn0.06-Ge; Ge/Ge0.94Sn0.06/Ge double heterostructure; PL; Si substrate; chemical vapor deposition; direct transition Ge0.94Sn0.06 PIN-diode double heterostructure light emitter; enhanced direct transition; intense pump power; pump power-dependent photoluminescence; temperature; DH-HEMTs; Educational institutions; Laser excitation; Photonic band gap; Silicon; Substrates; Tin;
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
DOI :
10.1109/Group4.2014.6962008
