Direct transition Ge0.94Sn0.06 PIN-diode double heterostructure light emitter at high injection

Author

Wei Du ; Ghetmiri, Seyed Amir ; Mosleh, Aboozar ; Conley, Benjamin R. ; Liang Huang ; Nazzal, Amjad ; Soref, Richard A. ; Sun, Guofa ; Tolle, John ; Margetis, Joe ; Naseem, Hameed A. ; Shui-Qing Yu

Author_Institution

Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA

fYear

2014

fDate

27-29 Aug. 2014

Firstpage

21

Lastpage

22

Abstract

The Ge/Ge_0.94Sn_0.06/Ge double heterostructure was grown on a Si substrate via chemical vapor deposition (CVD). The temperature and pump power-dependent photoluminescence (PL) were investigated and the enhanced direct transition at intense pump power was observed.

Keywords

chemical vapour deposition; germanium; germanium compounds; light emitting diodes; optical fabrication; optical films; optical pumping; p-i-n photodiodes; photoluminescence; silicon; CVD; Ge-Ge_0.94Sn_0.06-Ge; Ge/Ge_0.94Sn_0.06/Ge double heterostructure; PL; Si substrate; chemical vapor deposition; direct transition Ge_0.94Sn_0.06 PIN-diode double heterostructure light emitter; enhanced direct transition; intense pump power; pump power-dependent photoluminescence; temperature; DH-HEMTs; Educational institutions; Laser excitation; Photonic band gap; Silicon; Substrates; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2014 IEEE 11th International Conference on

Conference_Location

Paris

Print_ISBN

978-1-4799-2282-6

Type

conf

DOI

10.1109/Group4.2014.6962008

Filename

6962008