Title :
RESET-Enhancing Features for Via-Heated Phase-Change Memory Cells
Author :
Chen, F.T. ; Yeh, J.-T. ; Chao, Der-Sheng ; Chen, M.-J. ; Yen, P. ; Lee, C.-M. ; Chen, J.-W. ; Chen, W.-S. ; Kao, M.-J. ; Tsai, M.J.
Author_Institution :
EOL/Ind. Technol. Res. Inst., Hsinchu
Abstract :
The various means of improving the performance of phase-change memory cells are reviewed. Simulation predictions are compared with experimental results. Emphasis is placed on RESET current reduction by considering the balance between Joule heating input and heat loss to surroundings. For a given via design rule, the double-confined structure gives the best overall performance to date. We attribute this to the low thermal conductivity of the phase-change material.
Keywords :
phase change materials; random-access storage; RESET-enhancing features; low thermal conductivity; phase-change material; via-heated phase-change memory cells; Chaos; Conducting materials; Dielectric losses; Electrodes; Heating; Inorganic materials; Phase change memory; Plugs; Predictive models; Thermal conductivity;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2008.4530835
