Title :
Anisotropic etching of silicon in (CH/sub 3/)/sub 4/NOH solutions
Author :
Tabata, O. ; Asahi, R. ; Funabashi, H. ; Sugiyama, S.
Author_Institution :
Toyota Central Res. & Dev. Lab. Inc., Aichi, Japan
Abstract :
Detailed characteristics of tetramethyl ammoniumhydroxide, (CH/sub 3/)/sub 4/NOH, as silicon anisotropic etching solutions with various concentrations from 5 to 40 wt.% have been studied. The etch rates of
Keywords :
elemental semiconductors; etching; semiconductor technology; silicon; 90 C; Si surfaces; anisotropic etching solutions; elemental semiconductor; etch rates; micromachining; n-type; open-circuit potential; p-type; passivation potential; pyramidal-shaped hillocks; tetramethyl ammoniumhydroxide; Anisotropic magnetoresistance; Conductivity; Counting circuits; Electrodes; Etching; Impurities; Platinum; Silicon; Temperature dependence; Testing;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.149007
