• DocumentCode
    159420
  • Title

    Infrared photodetectors fabricated on 3D epitaxial Ge-on-Si

  • Author

    Frigerio, Jacopo ; Isa, F. ; Ghisetti, E. ; Isella, Giovanni ; Miglio, L.

  • Author_Institution
    Phys. Dept., Politec. di Milano, Como, Italy
  • fYear
    2014
  • fDate
    27-29 Aug. 2014
  • Firstpage
    61
  • Lastpage
    62
  • Abstract
    We present an infrared photodetector obtained by depositing Ge on patterned silicon substrates. The patterning prevents thermal cracks formation allowing for the deposition of several micrometer thick Ge layers, exhibiting strong absorption at the indirect gap (λ=1.88 μm).
  • Keywords
    elemental semiconductors; germanium; infrared detectors; optical fabrication; photodetectors; semiconductor epitaxial layers; thin film sensors; 3D epitaxial Ge-on-Si; Ge-Si; Si; absorption; indirect gap; infrared photodetector; patterned silicon substrates; wavelength 1.88 mum; Absorption; Optical device fabrication; Photodiodes; Silicon; Substrates; Three-dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4799-2282-6
  • Type

    conf

  • DOI
    10.1109/Group4.2014.6962020
  • Filename
    6962020
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=159420