DocumentCode :
159421
Title :
A CMOS-compatible Franz-Keldysh effect plasmonic modulator
Author :
Abadia, N. ; Olivier, S. ; Marris-Morini, D. ; Vivien, L. ; Bernadin, T. ; Weeber, J.C.
Author_Institution :
LETI, CEA, Grenoble, France
fYear :
2014
fDate :
27-29 Aug. 2014
Firstpage :
63
Lastpage :
64
Abstract :
We present a design of an optimized CMOS-compatible germanium-on-silicon Franz-Keldysh effect plasmonic modulator. Its length is below 30 μm and the modulator operates at -3V. It features a power consumption as low as 20 fJ/bit.
Keywords :
CMOS integrated circuits; elemental semiconductors; germanium; integrated optics; optical design techniques; optical modulation; plasmonics; power consumption; silicon; CMOS-compatible Franz-Keldysh effect plasmonic modulator; Ge-Si; plasmonic modulator design; power consumption; Electric fields; Modulation; Optical waveguides; Plasmons; Power demand; Propagation losses; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
Type :
conf
DOI :
10.1109/Group4.2014.6962021
Filename :
6962021
Link To Document :
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