Title :
Sub-nanometer EOT scaling on In0.53Ga0.47As with atomic layer deposited HfO2 as gate dielectric
Author :
Lee, K.Y. ; Chang, P. ; Chang, Y.C. ; Huang, M.L. ; Lee, Y.J. ; Hong, M. ; Kwo, J.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu
Abstract :
In this paper the scalability of ALD HfO2 in passivating high indium content InGaAs were studied. A capacitance equivalent thickness (CET) of 1.0 nm has been achieved in this work without any surface pretreated process.
Keywords :
III-V semiconductors; atomic layer deposition; gallium arsenide; hafnium compounds; indium compounds; monolithic integrated circuits; passivation; scaling circuits; HfO2; In0.53Ga0.47As; atomic layer deposition; capacitance equivalent thickness; gate dielectric; size 1.0 nm; sub nanometer EOT scaling; Argon; CMOS technology; Capacitance-voltage characteristics; Diodes; Gallium arsenide; Gold; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Indium gallium arsenide;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2008.4530841
