Achieving Low Vt (≪-0.3V) and Thin EOT (~1.0nm) in Gate First Metal/High-k pMOSFET for High Performance CMOS Applications

Author

Park, Soojin ; Bersuker, Gennadi ; Song, Seung Chul ; Park, Hark Byeong ; Burham, C. ; Ju, B.S. ; Park, C. ; Kirsch, P. ; Lee, B.H. ; Jammy, R.

Author_Institution

SEMATECH, Austin, TX

fYear

2008

Firstpage

154

Lastpage

155

Abstract

A metal/high-k gate stack with P-type band edge effective work function (EWF) of 5.1-5.2 eV is achieved through optimization of a Ru-Al based metal electrode. The critical factors controlling the high EWF values are found to be Al incorporation at the high-k/SiO₂ interface and stabilization of the conductive RuO₂ layer at the electrode/high-k interface. A pMOSFET with a fully optimized RuAl metal electrode system demonstrates a long channel Vt of-0.29 V with EOT= 1.05 nm.

Keywords

MOSFET; electrodes; ruthenium compounds; silicon compounds; CMOS application; P-type band edge effective work function; RuO₂; SiO₂; complementary metal-oxide-semiconductor; conductive layer; gate stack; high-k interface; metal electrode; metal-oxide-semiconductor field effect transistors; pMOSFET; voltage -0.29 V; Electrodes; Etching; Hafnium; High K dielectric materials; High-K gate dielectrics; Inorganic materials; MOSFET circuits; Manufacturing; Robustness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-1614-1

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2008.4530843

Filename

4530843