DocumentCode
1594450
Title
TMAHW etchants for silicon micromachining
Author
Schnakenberg, U. ; Benecke, W. ; Lange, P.
Author_Institution
Fraunhofer-Inst. fur Mikrostrukturtech., Berlin, Germany
fYear
1991
Firstpage
815
Lastpage
818
Abstract
Etching solutions based on tetramethyl ammonium hydroxide and water (TMAHW) are proposed for etching monocrystalline silicon. The nature of TMAHW solutions is discussed with respect to anisotropy, selectivity, and IC-process compatibility. At a solution temperature of 80 degrees C and 2 wt.% TMAH, a maximum
Keywords
elemental semiconductors; etching; integrated circuit technology; micromechanical devices; semiconductor technology; silicon; 80 C; Al metallisation; Al-Si; IC-process compatibility; Si micromachining; anisotropy; aqueous solutions; elemental semiconductor; etch rate; pH value; selectivity; tetramethyl ammonium hydroxide; Aluminum oxide; Anisotropic magnetoresistance; Etching; Metallization; Micromachining; Protection; Rough surfaces; Silicon; Surface roughness; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-87942-585-7
Type
conf
DOI
10.1109/SENSOR.1991.149008
Filename
149008
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