DocumentCode
1594461
Title
Anti-stokes emission in whispering gallery mode microcavities with semiconductor quantum dots
Author
Savateeva, Diana ; Donegan, John F. ; Rakovich, Yury P.
Author_Institution
Centro de Fis. de Mater., UPV, Donostia-San Sebastian, Spain
fYear
2015
Firstpage
1
Lastpage
4
Abstract
In this work we demonstrate the possibility to achieve efficient anti-Stokes photoluminescence emission and Raman scattering from semiconductor quantum dots deposited on spherical microcavity using excitation below the absorption edge of quantum dots. The largest spectral shift in photoluminescence spectra to shortwave region with respect to the excitation energy was found to be 380 meV, with periodic structure in optical spectra arising from the coupling between the emission from quantum dots and spherical cavity modes.
Keywords
Raman spectra; micro-optics; microcavities; photoluminescence; semiconductor quantum dots; whispering gallery modes; Raman scattering; anti-stokes emission; anti-stokes photoluminescence emission; electron volt energy 380 meV; microcavities; optical spectra; semiconductor quantum dots; whispering gallery mode; Absorption; Cadmium compounds; II-VI semiconductor materials; Microcavities; Phonons; Photonic band gap; Quantum dots; Raman spectroscopy; anti-Stokes emission; microluminescence; semiconductor quantum dots; whispering-gallery-modes;
fLanguage
English
Publisher
ieee
Conference_Titel
Transparent Optical Networks (ICTON), 2015 17th International Conference on
Conference_Location
Budapest
Type
conf
DOI
10.1109/ICTON.2015.7193656
Filename
7193656
Link To Document