Title :
Statistical Compact Modeling of Variations in Nano MOSFETs
Author :
Lin, Chung-Hsun ; Dunga, Mohan V. ; Lu, Darsen ; Niknejad, Ali M. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA
Abstract :
We present a methodology to generate performance-aware corner models--PAM. Accuracy is improved by emphasizing electrical variation data and reconciling the process and electrical variation data. PAM supports corner (plusmnsigma and plusmn2sigma) simulation and MC simulation. Furthermore, PAM supports application-specific corner cards, for example, for gain sensitive applications.
Keywords :
MOSFET; Monte Carlo methods; SPICE; nanoelectronics; semiconductor device models; statistical analysis; Monte Carlo simulation; PAM; SPICE MC simulation; application-specific corner cards; electrical variation data; nano MOSFET; performance-aware corner models; statistical compact modeling; 1f noise; CMOS technology; Circuit simulation; Computational modeling; Delay; Fabrics; MOSFETs; Resource description framework; SPICE; Semiconductor process modeling;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2008.4530849
