Abnormally High Current Local Fluctuations in Heavily Pocket-implanted Bulk Long MOSFET

For the first time, a strong current local fluctuations degradation on heavily pocket-implanted long devices is shown. This degradation, which is a serious concern for analog design, is attributed to the high potential barriers that stand at end sides of long devices and mainly control the device electrostatics. Because of the barriers height reduction as gate voltage increases, it is demonstrated that the excess fluctuations is highly gate bias dependent. But since current factor and threshold voltage do no longer enable a proper drain current modeling through whole gate bias, a new simple model based on the modulation of apparent threshold voltage with gate bias is introduced. This model allows a correct description of drain current and its excess fluctuations.