Accurate MOS modelling for analog circuit simulation using the EKV model

Effective, manufacture-oriented design and simulation of high-performance analog and mixed-mode integrated circuits and systems is known to critically depend on the quality of extracted device parameters as well as the simulation model being used. This has gained increased relevance for low-voltage low-current designs, either in bulk CMOS or emerging SOI technologies. The EKV model is introduced within a complete, statistically efficient and simple characterisation methodology. Valuable insight into the behavior of transistors in strong, moderate and weak inversion is gained, which also allows for increased design creativity. Measured results from a submicron bulk CMOS and a fully depleted SOI process illustrate the accuracy of the EKV model and the associated parameter extraction under several geometries and regions of device operation