• DocumentCode
    159493
  • Title

    Using memristor state change behavior to identify faults in photovoltaic arrays

  • Author

    Mathew, Jinesh ; Ottavi, Marco ; Yang, Yi ; Pradhan, D.K.

  • Author_Institution
    Dept. of Comput. Sci., Univ. of Bristol, Bristol, UK
  • fYear
    2014
  • fDate
    1-3 Oct. 2014
  • Firstpage
    86
  • Lastpage
    91
  • Abstract
    Memristor is an emerging non-volatile memory device that features smaller size and hybrid memristor/CMOS integration, which maximizes the advantages of high density and versatility. In this paper we utilize the memristor as weights and its state change behavior to capture some of the potential faults in a system. Photovoltaic arrays are taken as an example for the study. We will demonstrate that the state variations can be mapped into a timing which can be used as useful information for behavior of the system under measurement. Empirical studies are carried out using Spice based simulations to investigate into the impact of biasing and threshold voltages on timing behavior. Underpinning these studies, a relationship between input voltage and memristor state transition is proposed and extensively validated through further simulations to identify specific faulty behavior.
  • Keywords
    CMOS integrated circuits; memristors; random-access storage; CMOS integration; Spice based simulations; biasing voltages; fault identification; memristor state change behavior; nonvolatile memory device; photovoltaic arrays; specific faulty behavior; threshold voltages; timing behavior; Circuit faults; Computer architecture; Delays; Fault detection; Memristors; Photovoltaic cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2014 IEEE International Symposium on
  • Conference_Location
    Amsterdam
  • Print_ISBN
    978-1-4799-6154-2
  • Type

    conf

  • DOI
    10.1109/DFT.2014.6962094
  • Filename
    6962094