DocumentCode
159493
Title
Using memristor state change behavior to identify faults in photovoltaic arrays
Author
Mathew, Jinesh ; Ottavi, Marco ; Yang, Yi ; Pradhan, D.K.
Author_Institution
Dept. of Comput. Sci., Univ. of Bristol, Bristol, UK
fYear
2014
fDate
1-3 Oct. 2014
Firstpage
86
Lastpage
91
Abstract
Memristor is an emerging non-volatile memory device that features smaller size and hybrid memristor/CMOS integration, which maximizes the advantages of high density and versatility. In this paper we utilize the memristor as weights and its state change behavior to capture some of the potential faults in a system. Photovoltaic arrays are taken as an example for the study. We will demonstrate that the state variations can be mapped into a timing which can be used as useful information for behavior of the system under measurement. Empirical studies are carried out using Spice based simulations to investigate into the impact of biasing and threshold voltages on timing behavior. Underpinning these studies, a relationship between input voltage and memristor state transition is proposed and extensively validated through further simulations to identify specific faulty behavior.
Keywords
CMOS integrated circuits; memristors; random-access storage; CMOS integration; Spice based simulations; biasing voltages; fault identification; memristor state change behavior; nonvolatile memory device; photovoltaic arrays; specific faulty behavior; threshold voltages; timing behavior; Circuit faults; Computer architecture; Delays; Fault detection; Memristors; Photovoltaic cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2014 IEEE International Symposium on
Conference_Location
Amsterdam
Print_ISBN
978-1-4799-6154-2
Type
conf
DOI
10.1109/DFT.2014.6962094
Filename
6962094
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