• DocumentCode
    1595591
  • Title

    High performance Ge/Si avalanche photodiodes development in intel

  • Author

    Kang, Y. ; Huang, Z. ; Saado, Y. ; Campbell, J. ; Pauchard, A. ; Bowers, J. ; Paniccia, M.J.

  • Author_Institution
    Intel Corp., Santa Clara, CA, USA
  • fYear
    2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Ge/Si avalanche photodiodes with record high gain-bandwidth and sensitivity for communication wavelength and high data rate, 10Gbps and 40Gbps, is demonstrated. These devices can be monolithically integrated with other silicon photonics components using CMOS technology.
  • Keywords
    CMOS integrated circuits; Ge-Si alloys; avalanche photodiodes; integrated optics; CMOS technology; Ge-Si; Intel; avalanche photodiodes development; bit rate 10 Gbit/s; bit rate 40 Gbit/s; communication wavelength; gain-bandwidth; silicon photonics components; Avalanche photodiodes; Bandwidth; Optical waveguides; Receivers; Sensitivity; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2011 and the National Fiber Optic Engineers Conference
  • Conference_Location
    Los Angeles, CA
  • ISSN
    pending
  • Print_ISBN
    978-1-4577-0213-6
  • Type

    conf

  • Filename
    5875777
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1595591