Title :
Metrology for nanosystems and nanoelectronics reliability assessments
Author :
Obeng, Yaw S. ; Okoro, Chukwudi A. ; Kopanski, Joseph J.
Author_Institution :
Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
The traditional models and techniques for studying reliability in integrated circuits may not be appropriate for nanoelectronics and nanosystems. In this paper, we present an overview of a number of materials and metrology techniques currently under development in our group at NIST. Among other topics, we will assess the techniques and models currently used for evaluating integrated circuit reliability, as well as present some new approaches.
Keywords :
measurement; nanoelectronics; reliability; three-dimensional integrated circuits; integrated circuit reliability; metrology technique; nanoelectronics reliability assessment; nanosystem reliability assessment; three-dimensional integrated circuit; Capacitors; Image resolution; Materials; Materials reliability; CBCM; TSVs; charge based capacitance measurement; interconnects; metrology techniques; nanoelectronics; reliability; three-dimensional integrated circuits; through silicon vias;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-4673-2198-3
DOI :
10.1109/NANO.2012.6321886
