Title :
Electrical properties of a-SiOxNy:H films prepared by microwave PECVD
Author :
Rabiller, P. ; Klemberg-Sapieha, J.E. ; Wertheimer, M.R. ; Yelon, A.
Author_Institution :
Ecole Polytech., Montreal, Que., Canada
Abstract :
The authors report on the electrical properties of P-SiON films (ranging from pure nitride to oxide) prepared by microwave PECVD (plasma-enhanced chemical vapor deposition). These include static and high-frequency permittivities and DC conductivity, all of which vary systematically with film composition. It is shown that conduction in P-SiON occurs by means of field-enhanced thermal excitation of electrons from traps (Poole-Frenkel effect). However, it cannot be asserted that the conductivity is controlled by the Si-H content of the alloy, as indicated by previous studies
Keywords :
Poole-Frenkel effect; amorphous state; dielectric thin films; electron traps; electronic conduction in insulating thin films; hydrogen; permittivity; plasma CVD coatings; silicon compounds; DC conductivity; Poole-Frenkel effect; SEM; XPS; amorphous SiOxNy:H films; electrical properties; film composition; microwave PECVD; permittivities; plasma-enhanced chemical vapor deposition; semiconductor; thermal excitation; Dielectric measurements; Dielectric thin films; Frequency; High-K gate dielectrics; Microwave theory and techniques; Plasma density; Plasma properties; Plasma temperature; Silicon; Substrates;
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1989., Proceedings of the 3rd International Conference on
Conference_Location :
Trondheim
DOI :
10.1109/ICSD.1989.69208
