Title :
An active resonant snubber for high power IGBT converters
Author :
du T.Mouton, H. ; Combrink, F.W. ; Enslin, J.H.R.
Author_Institution :
Dept. of Electr. & Electron. Eng., Stellenbosch Univ., South Africa
fDate :
6/21/1905 12:00:00 AM
Abstract :
This paper introduces a new active resonant snubber topology suited to high power converters. The main feature of this snubber is that the peak current rating of the auxiliary switches is small compared to that of the main switches. The basic operation of the snubber is analyzed. This is followed by an experimental evaluation of the basic operating principles
Keywords :
DC-AC power convertors; PWM invertors; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; resonant power convertors; snubbers; switching circuits; active resonant snubber; auxiliary switches; basic operation; high-power IGBT converters; operating principles; peak current rating; Circuit topology; Insulated gate bipolar transistors; Network topology; Pulse width modulation converters; Resonance; Snubbers; Switches; Switching circuits; Switching converters; Zero voltage switching;
Conference_Titel :
Africon, 1999 IEEE
Conference_Location :
Cape Town
Print_ISBN :
0-7803-5546-6
DOI :
10.1109/AFRCON.1999.821832
