Title :
Thermal analysis of PT IGBT by using ANSYS
Author :
Ryu, Sehwan ; Han, Deukyoung ; Ahn, Hyungkeun ; El Nokali, M.
Author_Institution :
Dept. of Electr. Eng., Konkuk Univ., Seoul
Abstract :
As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability and efficient heat-sink design. In this paper, the thermal model and thermal distribution of discrete insulated gate bipolar transistor with non heat-sink and heat-sink has been studied. For analysis of thermal distribution, we obtained results by using finite element simulator, ANSYS and compared with experimental data.
Keywords :
finite element analysis; heat sinks; insulated gate bipolar transistors; power transistors; semiconductor device models; semiconductor device reliability; thermal analysis; ANSYS; PT IGBT; discrete insulated gate bipolar transistor; finite element simulator; heat-sink design; long-term reliability; power density; power electronics system; switching frequency; thermal analysis; thermal distribution; Electronic packaging thermal management; Finite element methods; Insulated gate bipolar transistors; Power electronics; Power system modeling; Silicon; Switching frequency; Temperature dependence; Thermal conductivity; Thermal engineering;
Conference_Titel :
Power Electronics, 2007. ICPE '07. 7th Internatonal Conference on
Conference_Location :
Daegu
Print_ISBN :
978-1-4244-1871-8
Electronic_ISBN :
978-1-4244-1872-5
DOI :
10.1109/ICPE.2007.4692348
