Thermal analysis of PT IGBT by using ANSYS

Author

Ryu, Sehwan ; Han, Deukyoung ; Ahn, Hyungkeun ; El Nokali, M.

Author_Institution

Dept. of Electr. Eng., Konkuk Univ., Seoul

fYear

2007

Firstpage

59

Lastpage

61

Abstract

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability and efficient heat-sink design. In this paper, the thermal model and thermal distribution of discrete insulated gate bipolar transistor with non heat-sink and heat-sink has been studied. For analysis of thermal distribution, we obtained results by using finite element simulator, ANSYS and compared with experimental data.

Keywords

finite element analysis; heat sinks; insulated gate bipolar transistors; power transistors; semiconductor device models; semiconductor device reliability; thermal analysis; ANSYS; PT IGBT; discrete insulated gate bipolar transistor; finite element simulator; heat-sink design; long-term reliability; power density; power electronics system; switching frequency; thermal analysis; thermal distribution; Electronic packaging thermal management; Finite element methods; Insulated gate bipolar transistors; Power electronics; Power system modeling; Silicon; Switching frequency; Temperature dependence; Thermal conductivity; Thermal engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics, 2007. ICPE '07. 7th Internatonal Conference on

Conference_Location

Daegu

Print_ISBN

978-1-4244-1871-8

Electronic_ISBN

978-1-4244-1872-5

Type

conf

DOI

10.1109/ICPE.2007.4692348

Filename

4692348