Novel three-terminal photosensitive thyristors and optically-controlled gates

Author

Zhu Chang-Chun ; Kang Xue-Jun ; Lui Jun-Hua

Author_Institution

Dept. of Electron. Eng., Xi´´an Jiaotong Univ., Shaanxi, China

fYear

1991

Firstpage

844

Lastpage

847

Abstract

Novel dual-intercontrolled photosensitive thyristors based on the lateral interaction effect between two current-controlled negative resistance switches with a metal/insulator (tunnel)/n-p/sup +/ semiconductor (MINP) four-layer structure have been developed. The thyristor consists of two MIS switches. Their electrical and optical characteristics and fabrication process are reported. These devices have been further developed to be optically controlled AND/OR gates.<>

Keywords

logic gates; metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; photodetectors; semiconductor switches; thyristor applications; thyristors; AND/OR gates; MINP; MIS switches; current-controlled negative resistance switches; dual controlled thyristors; electrical characteristics; fabrication; four-layer structure; lateral interaction effect; metal-insulator-n/p semiconductor structure; optical characteristics; optically-controlled gates; three-terminal photosensitive thyristors; Circuit testing; Conductivity; Epitaxial layers; Optical control; Optical device fabrication; Optical sensors; Substrates; Switches; Thyristors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-87942-585-7

Type

conf

DOI

10.1109/SENSOR.1991.149016

Filename

149016