Title :
Investigation on hot carrier effects in n-type short-channel junctionless nanowire transistors
Author :
Park, Chan-Hoon ; Ko, Myung-Dong ; Kim, Ki-Hyun ; Lee, Jeong-Soo ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
Hot carrier induced degradation of the n-type junctionless nanowire transistor (JNT) and the inversion-mode NWFET (IMNT) has been experimentally compared. The JNT shows better hot carrier (HC) immunity than the IMNT. The lateral peak electrical field intensity is lower in the JNT than the IMNT, which is observed by TCAD simulation work.
Keywords :
field effect transistors; hot carriers; nanowires; technology CAD (electronics); IMNT; TCAD simulation; hot carrier effect; hot carrier immunity; hot carrier induced degradation; inversion-mode NWFET; lateral peak electrical field intensity; n-type short-channel junctionless nanowire transistor; Capacitance-voltage characteristics; Degradation; Human computer interaction; Logic gates; Transistors; 10-years lifetime; Nanowire; hot carrier; junctionless; transistor;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-4673-2198-3
DOI :
10.1109/NANO.2012.6321907
