Symbolically defined empirical large-signal model for HBTs compared to the Gummel-Poon model

Author

Issaount, A. ; Kouki, Ammar B. ; Ghannouchi, F.M.

Author_Institution

Ecole de Technol. Super., Montreal, Que., Canada

Volume

1

fYear

2004

Firstpage

31

Abstract

An empirical symbolically defined nonlinear model, which accounts for several important effects in HBTs, is used in the large signal characterization of planar InGaP/GaAs HBTs. The model is designed to predict accurately the DC and RF characteristics based on an empirical equation. In order to assess the validity and the accuracy of the proposed model, a seven port symbolically defined device (SDD) based on the equation is constructed in an Agilent ADS circuit simulator for a 2×20 μm² emitter area transistor and compared to measurements as well as to the Spice Gummel-Poon model in DC, in small signal and in large signal modes. From this comparison, one can conclude that, for the device tested, the SDD empirical model gives better agreement with measurements than the Spice Gummel-Poon model, for all modes of operation.

Keywords

heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; 2 micron; 20 micron; Agilent ADS circuit simulator; DC characteristics; InGaP-GaAs; RF characteristics; Spice Gummel-Poon model; empirical large-signal model; large signal mode; microwave circuits; nonlinear model; planar HBT; small signal mode; symbolically defined device; transistor model; Circuit simulation; Diodes; Electrical resistance measurement; Equations; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Kirk field collapse effect; Predictive models; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2004. Canadian Conference on

ISSN

0840-7789

Print_ISBN

0-7803-8253-6

Type

conf

DOI

10.1109/CCECE.2004.1344951

Filename

1344951