Scaling expressions for DC parameters of a Gummel-Poon based model for HBTs

Author

Issaoun, A. ; Kouki, A.B. ; Ghannouchi, F.M.

Author_Institution

Ecole de Technol. Super., Montreal, Que., Canada

Volume

1

fYear

2004

Firstpage

35

Abstract

The crucial and, at the same time, powerful, DC model scaling of heterojunction bipolar transistors (HBTs) is addressed. The DC-model and its parameter extraction procedure were applied to model five AlGaAs/GaAs devices having an emitter area of 1×100 μm², 1×50 μm², 1×25 μm², 1×10 μm² and 1×4 μm². Then, fitting functions were developed to describe the variation of each model parameter to the emitter area of the device. The model predictions, using the scaling functions, are confirmed through their comparison to DC measurements of one of the used devices.

Keywords

heterojunction bipolar transistors; semiconductor device models; 1 to 100 micron; AlGaAs-GaAs; DC measurements; DC parameters; Gummel-Poon model; HBT; emitter area; fitting functions; heterojunction bipolar transistors; parameter extraction procedure; scaling expressions; scaling functions; Circuit simulation; Equations; Equivalent circuits; Heterojunction bipolar transistors; MMICs; Microwave transistors; Parameter extraction; Scalability; Temperature dependence; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2004. Canadian Conference on

ISSN

0840-7789

Print_ISBN

0-7803-8253-6

Type

conf

DOI

10.1109/CCECE.2004.1344952

Filename

1344952