Title :
Scaling expressions for DC parameters of a Gummel-Poon based model for HBTs
Author :
Issaoun, A. ; Kouki, A.B. ; Ghannouchi, F.M.
Author_Institution :
Ecole de Technol. Super., Montreal, Que., Canada
Abstract :
The crucial and, at the same time, powerful, DC model scaling of heterojunction bipolar transistors (HBTs) is addressed. The DC-model and its parameter extraction procedure were applied to model five AlGaAs/GaAs devices having an emitter area of 1×100 μm2, 1×50 μm2, 1×25 μm2, 1×10 μm2 and 1×4 μm2. Then, fitting functions were developed to describe the variation of each model parameter to the emitter area of the device. The model predictions, using the scaling functions, are confirmed through their comparison to DC measurements of one of the used devices.
Keywords :
heterojunction bipolar transistors; semiconductor device models; 1 to 100 micron; AlGaAs-GaAs; DC measurements; DC parameters; Gummel-Poon model; HBT; emitter area; fitting functions; heterojunction bipolar transistors; parameter extraction procedure; scaling expressions; scaling functions; Circuit simulation; Equations; Equivalent circuits; Heterojunction bipolar transistors; MMICs; Microwave transistors; Parameter extraction; Scalability; Temperature dependence; Thermal resistance;
Conference_Titel :
Electrical and Computer Engineering, 2004. Canadian Conference on
Print_ISBN :
0-7803-8253-6
DOI :
10.1109/CCECE.2004.1344952
